CHEMICAL-VAPOR-DEPOSITION OF ZRO2 THIN-FILMS MONITORED BY IR SPECTROSCOPY

Citation
Bj. Gould et al., CHEMICAL-VAPOR-DEPOSITION OF ZRO2 THIN-FILMS MONITORED BY IR SPECTROSCOPY, Journal of materials chemistry, 4(12), 1994, pp. 1815-1819
Citations number
18
Categorie Soggetti
Chemistry Physical","Material Science
ISSN journal
09599428
Volume
4
Issue
12
Year of publication
1994
Pages
1815 - 1819
Database
ISI
SICI code
0959-9428(1994)4:12<1815:COZTMB>2.0.ZU;2-L
Abstract
Thin films of ZrO2 have been grown under kinetic control by decomposit ion of zirconium tetra-tert-butoxide onto quartz substrates. The resul ting films have been characterised by optical and electron microscopy and X-ray diffraction. A phase transition from a poorly crystalline, m etastable form of zirconia to the monoclinic phase showing a strong pr eferred orientation takes place as the substrate temperature is raised from 450 to 500 degrees C. The decomposition of the precursor has bee n followed by ex situ infrared spectroscopy, allowing monitoring of th e gas-phase products as a function of substrate temperature. The possi ble mechanism for the decomposition reaction is discussed.