STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .2. EFFECT ON CRYSTALLINITY

Citation
Ml. Hitchman et al., STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .2. EFFECT ON CRYSTALLINITY, Journal of materials chemistry, 4(12), 1994, pp. 1827-1834
Citations number
10
Categorie Soggetti
Chemistry Physical","Material Science
ISSN journal
09599428
Volume
4
Issue
12
Year of publication
1994
Pages
1827 - 1834
Database
ISI
SICI code
0959-9428(1994)4:12<1827:SOTEON>2.0.ZU;2-D
Abstract
In this paper the effects of silane mole fraction, deposition temperat ure and the addition of NF3 on the crystallinity of as-deposited polys ilicon films and on the crystalline quality of annealed films have bee n investigated with the aid of Raman spectroscopy and scanning electro n microscopy (SEM). It has been found that without the addition of NF3 it is necessary not only to have a low deposition temperature, as pre viously suggested in the literature, but also to have a high silane mo le fraction in order to obtain amorphous films from which high-quality material can be obtained upon annealing. With the addition of NF3 it is has been found that amorphous layers may be grown, and hence good q uality annealed films obtained, at much higher deposition temperatures than is normally possible.