Ml. Hitchman et al., STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .2. EFFECT ON CRYSTALLINITY, Journal of materials chemistry, 4(12), 1994, pp. 1827-1834
In this paper the effects of silane mole fraction, deposition temperat
ure and the addition of NF3 on the crystallinity of as-deposited polys
ilicon films and on the crystalline quality of annealed films have bee
n investigated with the aid of Raman spectroscopy and scanning electro
n microscopy (SEM). It has been found that without the addition of NF3
it is necessary not only to have a low deposition temperature, as pre
viously suggested in the literature, but also to have a high silane mo
le fraction in order to obtain amorphous films from which high-quality
material can be obtained upon annealing. With the addition of NF3 it
is has been found that amorphous layers may be grown, and hence good q
uality annealed films obtained, at much higher deposition temperatures
than is normally possible.