HIGH-FIELD EFFECTS USEFUL FOR ATOMIC MANIPULATIONS

Citation
Tt. Tsong et al., HIGH-FIELD EFFECTS USEFUL FOR ATOMIC MANIPULATIONS, Zhongguo wuli xuekan, 32(5), 1994, pp. 667-684
Citations number
36
Categorie Soggetti
Physics
Journal title
ISSN journal
05779073
Volume
32
Issue
5
Year of publication
1994
Part
2
Pages
667 - 684
Database
ISI
SICI code
0577-9073(1994)32:5<667:HEUFAM>2.0.ZU;2-Z
Abstract
Using scanning tunneling microscope (STM), surface atoms can now be ma nipulated at one's will. The effects most conveniently used for atomic manipulation are produced by the high electric field established betw een the tip and the sample in the STM either by the application of a v oltage pulse or a voltage bias. We review here some of our recent stud ies aimed to find new methods for atomic manipulation as well as to un derstand the basic principles of different atomic manipulation techniq ues.