ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON

The electronic structure of a bounded intrinsic stacking fault in sili con is calculated. The method used is an LCAO-scheme (Linear Combinati ons of Atomic Orbitals) taking ten atomic orbitals of s-, p-, and d-ty pe into account. The levels in the band gap are extracted using Lanczo s' algorithm and a continued fraction representation of the local dens ity of states. We find occupied states located up to 0.3 eV above the valence band maximum (E(v)). This significantly differs from the resul t obtained for the ideal infinite fault for which the interface state is located at E(v)+ 0.1 eV.