EXTREMELY LOW-THRESHOLD (0.56 MA) OPERATION IN 1.3-MU-M INGAASP INP COMPRESSIVE-STRAINED-MQW LASERS/

Authors
UOMI K TSUCHIYA T KOMORI M OKA A SHINODA K OISHI A
Citation
K. Uomi et al., EXTREMELY LOW-THRESHOLD (0.56 MA) OPERATION IN 1.3-MU-M INGAASP INP COMPRESSIVE-STRAINED-MQW LASERS/, Electronics Letters, 30(24), 1994, pp. 2037-2038
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
24
Year of publication
1994
Pages
2037 - 2038
Database
ISI
SICI code
0013-5194(1994)30:24<2037:EL(MOI>2.0.ZU;2-P
Abstract
A record low threshold current of O.56mA, as a long-wavelength laser, has been obtained in a 1.3 mu m InGaAsP/InP strained-MQW laser, at roo m temperaturs (25 degrees C), by optimising an active layer and by emp loying a short cavity with high-reflection coatings.