YELLOW EMISSION (573.5NM) GA0.65IN0.35P LASERS GROWN ON GAAS0.6P0.4 SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
CHEN AC MOY AM CHENG KY TU CW
Citation
Ac. Chen et al., YELLOW EMISSION (573.5NM) GA0.65IN0.35P LASERS GROWN ON GAAS0.6P0.4 SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 30(24), 1994, pp. 2049-2050
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
24
Year of publication
1994
Pages
2049 - 2050
Database
ISI
SICI code
0013-5194(1994)30:24<2049:YE(GLG>2.0.ZU;2-B
Abstract
The first current injection lasing action in AlGaInP/Ga0.65In0.35P het erostructures grown on commercially available GaAs0.6P0.4 substrates i s reported. At 77K, laser diodes exhibited threshold current densities of 900A/cm(-2) with yellow stimulated emission near 6735 Angstrom. Th is is the shortest current injection lasing wavelength ever achieved i n a III-V compound semiconductor.