HIGH-RESISTIVITY INP-TI,BE BY GSMBE

Authors
SALAUN S GAUNEAU M LECORRE A MOTTET S VIALLET JE GUENEGOU H KERMEL C
Citation
S. Salaun et al., HIGH-RESISTIVITY INP-TI,BE BY GSMBE, Electronics Letters, 30(24), 1994, pp. 2076-2077
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
24
Year of publication
1994
Pages
2076 - 2077
Database
ISI
SICI code
0013-5194(1994)30:24<2076:HIBG>2.0.ZU;2-U
Abstract
The authors report the growth, by GSMBE and the semi-insulating behavi our of codoped InP:Ti,Be with high resistivities up to 4x10(7) Ohm cm. Current-voltage measurements have been performed and good agreement h as been found between experiment and theory using numerical simulation tools.