Citation
Ch. Ling et al., OBSERVATION OF CURRENT SPIKES IN THIN OXIDE MOS CAPACITOR, Electronics Letters, 30(24), 1994, pp. 2077-2079
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
30
Issue
24
Year of publication
1994
Pages
2077 - 2079
Database
ISI
SICI code
0013-5194(1994)30:24<2077:OOCSIT>2.0.ZU;2-A
Abstract
0.1 mu A cm(-2) current spikes have been reported recently in MOS capa
citors. The authors attribute this observation to current transients,
arising from the staircase sweep of the gate bias, and explain it in t
erms of the charging and discharging of the silicon space charge layer
, and recombination of electrons and holes near the interface.