ITA
ENG

X-RAY STUDIES OF HIGH-QUALITY GAN GROWN ON 0001 SAPPHIRE

Authors

PLANO WE MAJOR JS WELCH DF SPEIRS J

Citation

We. Plano et al., X-RAY STUDIES OF HIGH-QUALITY GAN GROWN ON 0001 SAPPHIRE, Electronics Letters, 30(24), 1994, pp. 2079-2081

Citations number

Categorie Soggetti

Engineering, Eletrical & Electronic

Journal title

Electronics Letters → ACNP

ISSN journal

00135194

Volume

Issue

Year of publication

1994

Pages

2079 - 2081

Database

ISI

SICI code

0013-5194(1994)30:24<2079:XSOHGG>2.0.ZU;2-C

Abstract

X-ray data are presented on high crystalline quality GaN grown on basa l plane (0001) sapphire by MOCVD. An X-ray rocking curve displaying Pe ndellosung fringes and having an FWHM of 27 s(-1) is reported for a 0. 7 mu m thick film. Reciprocal space mapping of the (0002) GaN reflecti on is presented.