LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF DIAMOND ON TUNGSTEN CARBIDES USING CF4 GAS DOPING FOR MACHINE-TOOL APPLICATIONS

Citation
Vj. Travaairoldi et al., LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF DIAMOND ON TUNGSTEN CARBIDES USING CF4 GAS DOPING FOR MACHINE-TOOL APPLICATIONS, Vacuum, 46(1), 1995, pp. 5-8
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
46
Issue
1
Year of publication
1995
Pages
5 - 8
Database
ISI
SICI code
0042-207X(1995)46:1<5:LCODOT>2.0.ZU;2-L
Abstract
We report here the improvement of the adhesion of CVD diamond films on WC- Co (6%) tools and the enhancement in the cutting tool life- time by the introduction of CF4 in the CH4/H-2 gas mixture. By the use of t his halogen precursor it was possible to reduce the substrate temperat ure during the deposition without degradation in the diamond film qual ity. The low-temperature deposition improves the smoothness of the coa ting and minimizes the thermal stress induced by the CVD process.