CORRELATIONS BETWEEN MEAN SPUTTER DEPTH AND ION FLUENCE DURING SPUTTERING OF BINARY COMPONENT MATERIALS

The dynamic Monte Carlo computer simulation has been used to estimate the mean sputter depth and the surface composition gradient of binary component materials during prolonged ion bombardment. Calculation resu lts indicate that for Pt0.5Cu0.5 sputtering, the Pt mean sputter depth is much larger than for Cu at high fluence, but the Pt mean sputter d epth approximates Cu at the zero fluence (in the low fluence limit). F or B-10(0.2) B-11(0.8) sputtering the B-10 mean sputter depth approxim ates the B-11 one, not only at the zero fluence but also at high fluen ce. The calculation results also indicate that the mean sputter depth depends on the surface composition gradient during prolonged ion bomba rdment. This dependence should be deeply concerned in high fluence spu ttering and high fluence implantation areas.