THE ANALYSIS OF THE SURFACE-STRUCTURE OF AL-FILMS ANODICALLY OXIDIZEDIN AN OXYGEN PLASMA

The anodization of Al-films was successfully achieved in an oxygen pla sma excited by a high-frequency (0.5 MHz) electromagnetic field in a q uartz reactor The surface structure and chemical states of the plasma anodized Al-films have been analysed using XPS, AES, XRD and SEM. The surface structure of anodic floating oxidised Al-films produced in the high-frequency oxygen plasma is fine and close, bright and clean and the ultraviolet reflectivity is up to 93%. The optical constants (n(1) /n(2), k) and the surface oxide layer thicknesses (d) of the anodic fl oating oxidised Al-films have also been measured (n(1)/n(2) = 1.22-1.3 0; k = 6.47; d = 200 nm) by means of ellipsometry (ELL). After oxidati on the columnar crystal of the Al-film's surface vanished. The structu re analysis results again prove that anodic floating oxidation in an h f oxygen plasma is a way of using the oxidation technique to distingui sh features. In this paper, we give structure analysis results of the bias oxidation Al-films by hf oxygen plasma, in comparison to floating oxidation by hf oxygen plasma.