INVESTIGATION OF THE EFFECTS OF PRETREATMENT ON THE INTERACTION BETWEEN A GAAS(100) SURFACE AND AN OXYGEN (ECR) PLASMA

Authors
MIKHAILOV GM KHUDOBIN SA MALIKOV IV
Citation
Gm. Mikhailov et al., INVESTIGATION OF THE EFFECTS OF PRETREATMENT ON THE INTERACTION BETWEEN A GAAS(100) SURFACE AND AN OXYGEN (ECR) PLASMA, Vacuum, 46(1), 1995, pp. 65-68
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
46
Issue
1
Year of publication
1995
Pages
65 - 68
Database
ISI
SICI code
0042-207X(1995)46:1<65:IOTEOP>2.0.ZU;2-X
Abstract
The interaction between oxygen and a GaAs(100) surface in an electron cyclotron (ECR) plasma was studied by XPS and Auger spectroscopy. Both stoichiometric and Ga-rich oxides were found to be formed. The oxide composition of 1+X1As1-X1O4-X1/Ga1+X2As1-X2O3/Ga1+X3OyAs1-X3/GaAs type s depend on the substrate temperature and on the pretreatment of the G aAs surface. The Ga oxide formed during the pretreatment procedure sig nificantly affects the interaction between the GaAs(100) surface and t he O-2 (ECR) plasma.