EFFECTS OF ELASTIC RELAXATION ON LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION FROM CROSS-SECTIONAL SPECIMENS OF GEXSI1-X SI STRAINED-LAYER SUPERLATTICES/

Authors
DUAN XF CHERNS D STEEDS JW
Citation
Xf. Duan et al., EFFECTS OF ELASTIC RELAXATION ON LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION FROM CROSS-SECTIONAL SPECIMENS OF GEXSI1-X SI STRAINED-LAYER SUPERLATTICES/, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 70(6), 1994, pp. 1091-1105
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties → ACNP
ISSN journal
01418610
Volume
70
Issue
6
Year of publication
1994
Pages
1091 - 1105
Database
ISI
SICI code
0141-8610(1994)70:6<1091:EOEROL>2.0.ZU;2-P
Abstract
A large-angle convergent-beam electron diffraction pattern with fine d iffraction lines from a cross-sectional specimen of Ge(x)Si1-x/Si stra ined-layer superlattices can give much information on local strain and misfit stress relaxation. The diffraction lines in the GeSi layers ar e shifted from those in the Si layers by the misfit strain and the str ain relaxation. In this paper we shall demonstrate that the effects of elastic relaxation and the residual strains can be separated.