EPR AND ENDOR STUDY OF THE P-B CENTER IN POROUS SILICON

Authors
BRATUS VY ISHCHENKO SS OKULOV SM VORONA IP VONBARDELEBEN HJ SCHOISSWOHL M
Citation
Vy. Bratus et al., EPR AND ENDOR STUDY OF THE P-B CENTER IN POROUS SILICON, Physical review. B, Condensed matter, 50(20), 1994, pp. 15449-15452
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
50
Issue
20
Year of publication
1994
Pages
15449 - 15452
Database
ISI
SICI code
0163-1829(1994)50:20<15449:EAESOT>2.0.ZU;2-B