ANISOTROPY OF THE ELECTRON HALL-MOBILITY IN 4H, 6H, AND 15R SILICON-CARBIDE

Authors
SCHADT M PENSL G DEVATY RP CHOYKE WJ STEIN R STEPHANI D
Citation
M. Schadt et al., ANISOTROPY OF THE ELECTRON HALL-MOBILITY IN 4H, 6H, AND 15R SILICON-CARBIDE, Applied physics letters, 65(24), 1994, pp. 3120-3122
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
24
Year of publication
1994
Pages
3120 - 3122
Database
ISI
SICI code
0003-6951(1994)65:24<3120:AOTEHI>2.0.ZU;2-I