CURRENT-VOLTAGE CHARACTERISTICS OF STRUCTURES WITH GAAS VICINAL FACESDELTA-DOPED WITH TIN

Authors
KADUSHKIN VI KULBACHINSKII VA BOGDANOV EV SENICHKIN AP
Citation
Vi. Kadushkin et al., CURRENT-VOLTAGE CHARACTERISTICS OF STRUCTURES WITH GAAS VICINAL FACESDELTA-DOPED WITH TIN, Semiconductors, 28(11), 1994, pp. 1042-1045
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
11
Year of publication
1994
Pages
1042 - 1045
Database
ISI
SICI code
1063-7826(1994)28:11<1042:CCOSWG>2.0.ZU;2-J