ESTIMATE OF THE EFFECTIVE NARROWING OF THE BAND-GAP IN HEAVILY-DOPED LAYERS OF SILICON STRUCTURES

Authors
MNATSAKANOV TT POMORTSEVA LI YAKOVLEV DG
Citation
Tt. Mnatsakanov et al., ESTIMATE OF THE EFFECTIVE NARROWING OF THE BAND-GAP IN HEAVILY-DOPED LAYERS OF SILICON STRUCTURES, Semiconductors, 28(11), 1994, pp. 1059-1061
Citations number
35
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
11
Year of publication
1994
Pages
1059 - 1061
Database
ISI
SICI code
1063-7826(1994)28:11<1059:EOTENO>2.0.ZU;2-U