FERMI-LEVEL SHIFTS AND ELECTRICAL-TRANSPORT PARAMETERS IN AMORPHOUS HYDROGENATED SILICON

Authors
GOLIKOVA OA
Citation
Oa. Golikova, FERMI-LEVEL SHIFTS AND ELECTRICAL-TRANSPORT PARAMETERS IN AMORPHOUS HYDROGENATED SILICON, Semiconductors, 28(11), 1994, pp. 1083-1086
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
11
Year of publication
1994
Pages
1083 - 1086
Database
ISI
SICI code
1063-7826(1994)28:11<1083:FSAEPI>2.0.ZU;2-C