EFFECT OF ANNEALING CONDITIONS ON THE PHOTOLUMINESCENCE INTENSITY OF SIER

Authors
SOBOLEV NA BRESLER MS GUSEV OB SHEK EI MAKAVIICHUK MI PARSHIN EO
Citation
Na. Sobolev et al., EFFECT OF ANNEALING CONDITIONS ON THE PHOTOLUMINESCENCE INTENSITY OF SIER, Semiconductors, 28(11), 1994, pp. 1100-1102
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
11
Year of publication
1994
Pages
1100 - 1102
Database
ISI
SICI code
1063-7826(1994)28:11<1100:EOACOT>2.0.ZU;2-P