STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANICCHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION

Authors
ZHAO JL GAO Y LIU XY SU XA HUANG SH YU JQ LIANG JC GAO HK
Citation
Jl. Zhao et al., STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANICCHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION, Journal of materials science letters, 13(23), 1994, pp. 1694-1696
Citations number
15
Categorie Soggetti
Material Science
Journal title
Journal of materials science letters → ACNP
ISSN journal
02618028
Volume
13
Issue
23
Year of publication
1994
Pages
1694 - 1696
Database
ISI
SICI code
0261-8028(1994)13:23<1694:SODLIG>2.0.ZU;2-W