S. Goujard et al., THE OXIDATION BEHAVIOR OF 2-DIMENSIONAL AND 3-DIMENSIONAL C SIC THERMOSTRUCTURAL MATERIALS PROTECTED BY CHEMICAL-VAPOR-DEPOSITION POLYLAYERS COATINGS/, Journal of Materials Science, 29(23), 1994, pp. 6212-6220
The oxidation behaviour of two- and three-dimensional C/SiC protected
by a chemical-vapour-deposition (CVD) ceramic coating was studied. The
elements used to achieve the surface protection were silicon, boron a
nd carbon, preferably forming SiC, B or B,C. The best results were obt
ained with the trilayer coatings, that is with, SiC as the internal la
yer, boron or boron carbide, as the intermediate layer and an external
SiC layer. To get a good protection in a large temperature range, fro
m 450 to 1500 degrees C, the total thickness of the trilayers must be
higher than 160 mu m and the intermediate layer thickness must be high
er than 5 mu m. Morphological characterization of oxidized samples has
shown that, for intermediate oxidation temperatures, a glass was prod
uced in the cracks. When the oxidation temperature was equal to or hig
her than 1300 degrees C, sealing of the cracks was rarely observed, bu
t the oxidation resistance remained satisfactory.