PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS FROM A METAL-ORGANIC PRECURSOR

Authors
HOFFMAN DM RANGARAJAN SP ATHAVALE SD DESHMUKH SC ECONOMOU DJ LIU JR ZHENG ZS CHU WK
Citation
Dm. Hoffman et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS FROM A METAL-ORGANIC PRECURSOR, Journal of materials research, 9(12), 1994, pp. 3019-3021
Citations number
29
Categorie Soggetti
Material Science
Journal title
Journal of materials research → ACNP
ISSN journal
08842914
Volume
9
Issue
12
Year of publication
1994
Pages
3019 - 3021
Database
ISI
SICI code
0884-2914(1994)9:12<3019:PCOSFF>2.0.ZU;2-B
Abstract
Silicon nitride films are grown by plasma enhanced chemical vapor depo sition from tetrakis(dimethylamido)silicon, Si(NMe2)4, and ammonia pre cursors at substrate temperatures of 200-400-degrees-C. Backscattering spectrometry shows that the films are close to stoichiometric. Depth profiling by Auger electron spectroscopy shows uniform composition and no oxygen or carbon contamination in the bulk. The films are featurel ess by scanning electron microscopy under 100,000 x magnification.