TRANSIENT ELECTROLUMINESCENCE OF MONOLAYER AND BILAYER SEXITHIOPHENE DIODES

Authors
DELANNOY P HOROWITZ G BOUCHRIHA H DELOFFRE F FAVE JL GARNIER F HAJLAOUI R HEYMAN M KOUKI F MONGE JL VALAT P WINTGENS V YASSAR A
Citation
P. Delannoy et al., TRANSIENT ELECTROLUMINESCENCE OF MONOLAYER AND BILAYER SEXITHIOPHENE DIODES, Synthetic metals, 67(1-3), 1994, pp. 197-200
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Mining
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
67
Issue
1-3
Year of publication
1994
Pages
197 - 200
Database
ISI
SICI code
0379-6779(1994)67:1-3<197:TEOMAB>2.0.ZU;2-N
Abstract
The transient electroluminescence of monolayer and bilayer sexithiophe ne-based diodes has been measured. The delay time of the luminescence onset of the monolayer diode corresponds to a hole mobility of 5 x 10( -6) cm(2) V-1 s(-1) which is considerably lower than that obtained by field-effect measurements. This is interpreted in terms of strong tran sient trapping. The bilayer diode presents a twofold time-resolved res ponse which is attributed to the different mobility of its constituent layers.