ESR STUDIES OF SEMICONDUCTOR-DOPED GLASSES

Electron spin resonance of semiconductor-doped phosphate glasses has b een measured at 77 K. Three types of signal are induced with precipita tion of semiconductor nanocrystals in glass host materials. Two of the m are attributed to glass defects around semiconductor nanocrystals an d the other to S vacancies in CdS nanocrystals. The increase in electr on spin resonance absorption with Ar-ion laser irradiation reveals tha t carriers photoexcited in nanocrystals are trapped not only on nanocr ystal defects but also glass defects.