HIGH-RATE DEPOSITION OF SIO2 ON LARGE-SCALE GLASS BY DC ARC PLASMA-ENHANCED CVD

Citation
E. Ogino et al., HIGH-RATE DEPOSITION OF SIO2 ON LARGE-SCALE GLASS BY DC ARC PLASMA-ENHANCED CVD, Journal of non-crystalline solids, 178, 1994, pp. 215-219
Citations number
9
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
178
Year of publication
1994
Pages
215 - 219
Database
ISI
SICI code
0022-3093(1994)178:<215:HDOSOL>2.0.ZU;2-5
Abstract
Preparation of SiO2 films on large-scale glass substrates has been stu died. Coatings were formed by a newly developed high-density are plasm a enhanced chemical vapor deposition system with two widely spread she et-like plasmas generated by hollow-type de are plasma guns. The film structure strongly depended on the SiH4/O-2 flow ratio, and the optimu m ratio for obtaining the film of good optical properties and chemical durabilities was found to be 1/2, based on the film composition evalu ated by infrared transmission spectroscopy and X-ray photoelectron spe ctroscopy. The film deposited at the optimum gas condition had no Si-O H or Si-H groups in the film structure and showed good optical propert ies and chemical durability. The deposition rate increased with an inc rease in the SiH, flow rate, and finally a rate of 11.8 nm/s was achie ved, while maintaining good film properties. Deposition with good thic kness uniformity was also achieved by calculating the appropriate arra ngement of several gas nozzles based on a cosine law distribution.