E. Ogino et al., HIGH-RATE DEPOSITION OF SIO2 ON LARGE-SCALE GLASS BY DC ARC PLASMA-ENHANCED CVD, Journal of non-crystalline solids, 178, 1994, pp. 215-219
Preparation of SiO2 films on large-scale glass substrates has been stu
died. Coatings were formed by a newly developed high-density are plasm
a enhanced chemical vapor deposition system with two widely spread she
et-like plasmas generated by hollow-type de are plasma guns. The film
structure strongly depended on the SiH4/O-2 flow ratio, and the optimu
m ratio for obtaining the film of good optical properties and chemical
durabilities was found to be 1/2, based on the film composition evalu
ated by infrared transmission spectroscopy and X-ray photoelectron spe
ctroscopy. The film deposited at the optimum gas condition had no Si-O
H or Si-H groups in the film structure and showed good optical propert
ies and chemical durability. The deposition rate increased with an inc
rease in the SiH, flow rate, and finally a rate of 11.8 nm/s was achie
ved, while maintaining good film properties. Deposition with good thic
kness uniformity was also achieved by calculating the appropriate arra
ngement of several gas nozzles based on a cosine law distribution.