THRESHOLD ELECTRIC-FIELD FOR DEPINNING OF THE SPIN-DENSITY-WAVE IN (TMTSF)2ASF6

Citation
M. Nagasawa et al., THRESHOLD ELECTRIC-FIELD FOR DEPINNING OF THE SPIN-DENSITY-WAVE IN (TMTSF)2ASF6, Solid state communications, 93(1), 1995, pp. 33-36
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
93
Issue
1
Year of publication
1995
Pages
33 - 36
Database
ISI
SICI code
0038-1098(1995)93:1<33:TEFDOT>2.0.ZU;2-W
Abstract
The threshold electric field (Er) for depinning of the spin density wa ve (SDW) in (TMTSF)2AsF6 has been measured under pressure below 0.4 GP a. Within the pressure range studied E(T) decreases with increasing te mperature up to the transition temperature. The results are compared w ith the theory by Maki and Virosztek. It is likely that, contrary to t he general belief, the SDW in (TMTSF)2AsF6 is commensurate, not incomm ensurate. Below 3 K temperature the dependence of E(T) becomes stronge r and the ratio of the non-ohmic conductivity to the ohmic component d ecreases. Some changes in the SDW phase occur at 3K.