HALL RESISTIVITY OF HOLE-DOPED AND ELECTRON-DOPED HIGH-TC CUPRATES

Authors
Citation
H. Fehske et M. Deeg, HALL RESISTIVITY OF HOLE-DOPED AND ELECTRON-DOPED HIGH-TC CUPRATES, Solid state communications, 93(1), 1995, pp. 41-44
Citations number
30
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
93
Issue
1
Year of publication
1995
Pages
41 - 44
Database
ISI
SICI code
0038-1098(1995)93:1<41:HROHAE>2.0.ZU;2-5
Abstract
We investigate the doping dependence of the Hall resistivity of high-T (c) superconductors in terms of the t-t'-J model using a spin-rotation -invariant slave-boson technique. A second-neighbour hopping t' of dif ferent sign is included in order to reproduce the Fermi surfaces of bo th hole- and electron-doped systems in the noninteracting limit. Corre lation effects are responsible for renormalization of the quasiparticl e band. The results of our slave-boson calculation are in excellent ag reement with experiments on La2-xSr(x)CuO4, YBa2Cu3O6+x, and Nd2-xCe(x )CuO4.