STRAIN EFFECTS IN EPITAXIAL GAN GROWN ON ALN-BUFFERED SI(111)

Authors
MENG WJ PERRY TA
Citation
Wj. Meng et Ta. Perry, STRAIN EFFECTS IN EPITAXIAL GAN GROWN ON ALN-BUFFERED SI(111), Journal of applied physics, 76(12), 1994, pp. 7824-7828
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
12
Year of publication
1994
Pages
7824 - 7828
Database
ISI
SICI code
0021-8979(1994)76:12<7824:SEIEGG>2.0.ZU;2-C