STUDY OF C49-TISI2 AND C54-TISI2 FORMATION ON DOPED POLYCRYSTALLINE SILICON USING IN-SITU RESISTANCE MEASUREMENTS DURING ANNEALING

Authors
CLEVENGER LA MANN RW ROY RA SAENGER KL CABRAL C PICCIRILLO J
Citation
La. Clevenger et al., STUDY OF C49-TISI2 AND C54-TISI2 FORMATION ON DOPED POLYCRYSTALLINE SILICON USING IN-SITU RESISTANCE MEASUREMENTS DURING ANNEALING, Journal of applied physics, 76(12), 1994, pp. 7874-7881
Citations number
35
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
12
Year of publication
1994
Pages
7874 - 7881
Database
ISI
SICI code
0021-8979(1994)76:12<7874:SOCACF>2.0.ZU;2-T