DEPENDENCE OF THE INTERFACE SHARPNESS OF A GE SINGLE-QUANTUM-WELL ON MOLECULAR-BEAM-EPITAXIAL GROWTH-CONDITIONS

Authors
KISSINGER W OSTEN HJ LIPPERT G DIETRICH B BUGIEL E
Citation
W. Kissinger et al., DEPENDENCE OF THE INTERFACE SHARPNESS OF A GE SINGLE-QUANTUM-WELL ON MOLECULAR-BEAM-EPITAXIAL GROWTH-CONDITIONS, Journal of applied physics, 76(12), 1994, pp. 8042-8047
Citations number
31
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
12
Year of publication
1994
Pages
8042 - 8047
Database
ISI
SICI code
0021-8979(1994)76:12<8042:DOTISO>2.0.ZU;2-D