EFFECT OF POINT SELF-DEFECTS ON ELECTRICA L-ACTIVITY OF ERBIUM IN SILICON

Authors
GRESSEROV BN
Citation
Bn. Gresserov, EFFECT OF POINT SELF-DEFECTS ON ELECTRICA L-ACTIVITY OF ERBIUM IN SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 20(12), 1994, pp. 1-3
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
20
Issue
12
Year of publication
1994
Pages
1 - 3
Database
ISI
SICI code
0320-0116(1994)20:12<1:EOPSOE>2.0.ZU;2-I