Sj. Xia et Wf. Zhou, FORMATION OF THE ANODIC LEAD(II) OXIDE FILM ON LEAD IN ALKALINE-SOLUTION AND ITS SEMICONDUCTING PROPERTIES, Journal of electroanalytical chemistry [1992], 379(1-2), 1994, pp. 361-364
The anodic lead(II) oxide studied was formed in 0.1 M NaOH solution (6
0 degrees C) at 0.2 V (vs. Hg/HgO) on a lead electrode. The compositio
n of the oxide film, characterized by X-ray diffractometry and cyclic
voltammetry, is mainly tet-PbO, and small amounts of Pb2O3 and PbOx (1
< x < 2). The mechanism of formation of the oxide film was investigat
ed using chronoamperometry. If was found that the oxide film forms by
a diffusion mechanism. The results of ac impedance investigations show
that the oxide film is an n-type semiconductor. The donor density and
flat-band potential of the oxide film are 3.73 x 10(16) cm(-3) and -0
.79 V respectively.