BORON-DOPED VAPOR-DEPOSITED DIAMOND TEMPERATURE MICROSENSORS

Citation
M. Aslam et al., BORON-DOPED VAPOR-DEPOSITED DIAMOND TEMPERATURE MICROSENSORS, Sensors and actuators. A, Physical, 45(2), 1994, pp. 131-137
Citations number
39
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09244247
Volume
45
Issue
2
Year of publication
1994
Pages
131 - 137
Database
ISI
SICI code
0924-4247(1994)45:2<131:BVDTM>2.0.ZU;2-S
Abstract
Boron-doped chemical vapor deposition (CVD) diamond thermistors show t emperature and response-time ranges of 80-1270 K and 0.29-25 mus, resp ectively. A reduction of the thermistor dimensions below 10 mum result s in lithographic problems related to surface roughness of the diamond films. Using diamond nucleation densities in the range 10(8)-10(11) c m-2, the surface roughness is studied employing a second-generation mu ltisensor diamond test chip with a minimum feature size of 5 mum. The chip is expected to help commercialize CVD diamond thermistors in the near term.