STRUCTURAL INVESTIGATIONS OF INGAAS INGAAS SLSS FOR OPTOELECTRONIC DEVICE APPLICATIONS/

InGaAs/InGaAs strained layer superlattices (SLSs) are interesting cand idates for optoelectronic device applications working in the 1.55 mum range. However, it was recognized very early that both the miniband wi dths and interband transition energies in these very shallow systems a re extremely sensitive to the final value of all structural parameters . As a consequence, any unwanted modification of the composition and t hickness of the wells and barriers, with respect to the nominal ones, should be carefully avoided and, at the same time, systematically chec ked. Toward this end, since the most useful and non-destructive techni ques are X-ray and optical spectroscopy, we present in this work a com parative evaluation of their respective sensitivity.