We report the operation of etched GaAs/AlGaAs multiple quantum well mi
croresonators as low threshold all-optical bistable devices. The studi
ed samples are 2-dimensional arrays of cylindrical microresonators of
6 mum height, with diameters of 4 mum and 6.4 mum. They are realized b
y SiCl4 reactive ion etching of an epitaxial high finesse vertical mic
rocavity structure. Due to the lateral carrier and light confinement,
optical bistability is observed with a strongly reduced threshold powe
r, below 100 muW for the 4 mum diameter devices. The optical confineme
nt allows to achieve a high cavity Q factor in a reduced volume, and l
eads to the observation of multiple hysteresis loops due to the transv
erse mode structure of 6.4 mum diameter microresonators. The low bista
bility threshold, obtained without post-etching surface treatment, is
attributed to a self-passivation occurring during the etching process,
as evidenced by the observation of a thin coating film protecting the
microresonator vertical surfaces.