In this paper, after a review of different works carried on power MOSF
ET modeling, an interesting approach is presented. This approach is ba
sed on the measurements of MOSFET external currents and voltages in a
specified switching cell. Different phases are recognized during turn-
on and turn-off and related systems of equations are defined to repres
ent the MOSFET behavior. This model needs few parameters, which can be
easily determined. Besides, a sensibility study is carried out, in or
der to determine the model limitations. This study allows furthermore
a good understanding of different factors affecting the switching.