BEHAVIORAL-STUDY OF POWER MOSFET SWITCHIN G

Citation
E. Farjah et al., BEHAVIORAL-STUDY OF POWER MOSFET SWITCHIN G, Journal de physique. III, 4(12), 1994, pp. 2531-2555
Citations number
12
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
ISSN journal
11554320
Volume
4
Issue
12
Year of publication
1994
Pages
2531 - 2555
Database
ISI
SICI code
1155-4320(1994)4:12<2531:BOPMSG>2.0.ZU;2-Y
Abstract
In this paper, after a review of different works carried on power MOSF ET modeling, an interesting approach is presented. This approach is ba sed on the measurements of MOSFET external currents and voltages in a specified switching cell. Different phases are recognized during turn- on and turn-off and related systems of equations are defined to repres ent the MOSFET behavior. This model needs few parameters, which can be easily determined. Besides, a sensibility study is carried out, in or der to determine the model limitations. This study allows furthermore a good understanding of different factors affecting the switching.