CHARACTERISTICS OF THE GROWTH OF SILICON- CARBIDE EPITAXIAL LAYERS FROM GAS-PHASE PRODUCED BY MAGNETOTRON REACTIVE SPUTTERING

Authors
ROGACHEV NA KUZNETSOV AN TERUKOV EI LEBEDEV AA CHELNOKOV VE
Citation
Na. Rogachev et al., CHARACTERISTICS OF THE GROWTH OF SILICON- CARBIDE EPITAXIAL LAYERS FROM GAS-PHASE PRODUCED BY MAGNETOTRON REACTIVE SPUTTERING, Pis'ma v Zurnal tehniceskoj fiziki, 20(7), 1994, pp. 51-54
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
20
Issue
7
Year of publication
1994
Pages
51 - 54
Database
ISI
SICI code
0320-0116(1994)20:7<51:COTGOS>2.0.ZU;2-E