MORPHOLOGY AND LUMINESCENCE OF P-DOPED POROUS SILICON

Porous silicon (PS) layers were created with different etching conditi ons on boron doped silicon wafers. Morphologies of the PS layers and t heir surfaces were investigated with atomic force and scanning electro n microscopy. Low current densities during anodization led to homogene ous layers, while high current densities resulted in strain induced me chanical instabilities. The strain leads to a peeling off of the layer for micro- or mesoporous silicon. In contrast, in macroporous films s train can be relieved laterally leading to the local formation of chan nels. Luminescence properties of the samples are investigated and rela ted to the PS morphology.