INVESTIGATION OF INTRINSIC-CARRIER CONCENTRATION, MINORITY-CARRIER CONCENTRATION AND BUILT-IN ELECTRIC-FIELD FOR HEAVILY BORON-DOPED SILICON WITH NON-PARABOLIC ENERGY-BANDS AT LOW-TEMPERATURES

The minority-carrier concentration, the intrinsic-carrier concentratio n and the built-in electric field are analysed for a heavily boron-dop ed silicon with nonparabolic energy bands. In comparison with the intr insice carrier concentration and the built-in electric field with a de generate approximation, it is clear that it is necessary to adopt non- parabolic energy bands at high doping concentrations.