EMPIRICAL RELATIONS FOR ELECTRON-MOBILITY IN SILICON

The electron mobility in silicon has been obtained by the Monte Carlo simulation technique for different applied electric fields and under v arious physical conditions, such as temperature, impurity concentratio n, etc. The mobility values have then been expressed empirically by si mple power law relationships. It is observed that the mobility values calculated by using these simple power law relations yield values that show agreement within 5% with those obtained from the detailed Monte Carlo simulation technique. It is concluded that these empirical relat ions can be used very effectively in a device modelling program.