Stoichiometric Ba-x Sr-1-x TiO3 samples with various values of x were
prepared by a solution method. The starting materials were titanium is
opropoxide and hydroxides of barium and strontium. Powders were obtain
ed by evaporation of the precursor solution, and thin films were depos
ited by spin coating. The annealing temperature required to obtain com
plete conversion to the crystalline material increases with increasing
x and ranges from 150 to 600 degrees C. High quality polycrystalline
films of Ba0.5Sr0.5 TiO3 were achieved on a silicon substrate at 550 O
C, Leakage current as a function of applied voltage (I-V) measurements
on the metal-insulator-semiconductor structure (where the insulating
layer is Ba0.5Sr0.5 TiO3 film) on n-type silicon substrates showed dio
de-like behavior.