CHARACTERIZATION OF P-CUGA0.25IN0.75SE2 N-ZN0.35CD0.65S POLYCRYSTALLINE THIN-FILM HETEROJUNCTIONS

Authors
APARNA Y NAIDU BS REDDY PJ
Citation
Y. Aparna et al., CHARACTERIZATION OF P-CUGA0.25IN0.75SE2 N-ZN0.35CD0.65S POLYCRYSTALLINE THIN-FILM HETEROJUNCTIONS, Thin solid films, 253(1-2), 1994, pp. 67-71
Citations number
28
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
253
Issue
1-2
Year of publication
1994
Pages
67 - 71
Database
ISI
SICI code
0040-6090(1994)253:1-2<67:COPNP>2.0.ZU;2-B
Abstract
Polycrystalline thin film n-Zn0.35Cd0.65S/(p)-CuGa0.25In0.75Se2 hetero junctions were fabricated and the current density-voltage, capacitance -voltage and spectral response characteristics of the junctions were s tudied. The heterojunction was illuminated in the back-wall configurat ion and an open-circuit voltage of 425 mV, a short-circuit current den sity of 30 mA cm(-2) and an electrical conversion efficiency of 8.8% h ave been obtained for a cell with an active area of 1 cm(2) under a so lar input of 85 mW cm(-2).