CU DEPOSITION USING A PERMANENT-MAGNET ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA SOURCE

An elecron cyclotron resonance (ECR) plasma has been used in conjuncti on with a solid metal sputter target for Cu deposition over a 200 mm d iameter. The goal is to develop a deposition process suitable for fill ing submicron, high aspect ratio features used for ultralarge-scale in tegration. The system uses a permanent magnet for creation of the magn etic field necessary for ECR and is significantly more compact than sy stems equipped with electromagnets. A custom launcher design allows re mote microwave injection with the microwave entrance window shielded f rom the Cu flux. Cu deposition rates up to 100 nm min(-1) were observe d and film resistivities were typically in the low to mid 2 mu Omega c m range. On the basis of deposition rate measurements at two radial sa mple positions, uniformities of a few per cent over a 200 mm wafer sho uld be attainable.