CHEMICAL-VAPOR-DEPOSITION OF TISI2 USING SIH4 AND TICL4

Authors
MENDICINO MA SOUTHWELL RP SEEBAUER EG
Citation
Ma. Mendicino et al., CHEMICAL-VAPOR-DEPOSITION OF TISI2 USING SIH4 AND TICL4, Thin solid films, 253(1-2), 1994, pp. 473-478
Citations number
17
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
253
Issue
1-2
Year of publication
1994
Pages
473 - 478
Database
ISI
SICI code
0040-6090(1994)253:1-2<473:COTUSA>2.0.ZU;2-L
Abstract
An experimental approach for optimizing process parameters for TiSi2 c hemical vapor deposition is described that combines measurements under ultrahigh vacuum conditions and at normal processing pressures. This approach has given an unprecedentedly detailed view of the chemical me chanisms underlying this deposition system.