REALISTIC ELECTROMIGRATION LIFETIME PROJECTION OF VLSI INTERCONNECTS

Tungsten plug contacts/vias electromigration experiments have been per formed using a variety of test structures under different stress condi tions. It was found that electromigration failures, failure mechanisms of tungsten plug contacts/vias, were strongly influenced by the test structures and stress conditions. This paper discusses the effect of t est structures and stress conditions on electromigration failure for r ealistic lifetime projection of VLSI interconnects.