Hq. Shao et al., EFFECT OF ANNEALING ON PHASE-STRUCTURE AND DEGRADATION OF A ZINC-OXIDE VARISTOR WITH SI-ADDITIVE, Journal of the European Ceramic Society, 17(1), 1997, pp. 55-59
The effect of annealing of phase structure and degradation of the curr
ent-voltage characteristics for a ZnO varistor with Si-additive has be
en investigated. By means of X-ray diffraction, analytical electron mi
croscopy and thermal analysis, it is found that a phase transition fro
m delta-Bi2O3 (with dissolved Si), to Bi24Si2O40 (bismuth silicate) to
ok place in the ZnO varistor after annealing at 470 degrees C. This tr
ansition is associated with a volume contraction, no notable thermal e
ffect, a high transition rate and reversibility. It is calculated by c
rystallography that the volume contraction of the phase transition is
6.02%. The transition of the Bi-rich phase results in decreased levels
of degradation and improved stability of the ZnO varistor. (C) 1996 E
lsevier Science Limited.