EFFECT OF ANNEALING ON PHASE-STRUCTURE AND DEGRADATION OF A ZINC-OXIDE VARISTOR WITH SI-ADDITIVE

Citation
Hq. Shao et al., EFFECT OF ANNEALING ON PHASE-STRUCTURE AND DEGRADATION OF A ZINC-OXIDE VARISTOR WITH SI-ADDITIVE, Journal of the European Ceramic Society, 17(1), 1997, pp. 55-59
Citations number
16
Categorie Soggetti
Material Science, Ceramics
ISSN journal
09552219
Volume
17
Issue
1
Year of publication
1997
Pages
55 - 59
Database
ISI
SICI code
0955-2219(1997)17:1<55:EOAOPA>2.0.ZU;2-H
Abstract
The effect of annealing of phase structure and degradation of the curr ent-voltage characteristics for a ZnO varistor with Si-additive has be en investigated. By means of X-ray diffraction, analytical electron mi croscopy and thermal analysis, it is found that a phase transition fro m delta-Bi2O3 (with dissolved Si), to Bi24Si2O40 (bismuth silicate) to ok place in the ZnO varistor after annealing at 470 degrees C. This tr ansition is associated with a volume contraction, no notable thermal e ffect, a high transition rate and reversibility. It is calculated by c rystallography that the volume contraction of the phase transition is 6.02%. The transition of the Bi-rich phase results in decreased levels of degradation and improved stability of the ZnO varistor. (C) 1996 E lsevier Science Limited.