METALORGANIC MOLECULAR-BEAM EPITAXY OF III-V COMPOUNDS FOR SOLAR-CELLAPPLICATION

This paper reports the metalorganic molecular beam epitaxy of GaAs, In P, and GaP using TBAs and TBP as group-V sources and TEGa and TMIn as group-III sources. It is found, that the growth of GaAs is dominated b y thermal decomposition of TEGa, while the growth of GaP and InP is in fluenced by both the reacting group-III and phosphorus species. The Ga As epilayers grown using cracked TBAs show p-type conduction with hole concentrations being varied in the range of 7 X 10(16)-1.7 X 10(19) c m(-3) at 300 K as the cracking temperatures varied from 1300 to 1700 d egrees C. The hole concentration increases with the cracking temperatu re above 1450 degrees C, suggesting that the carbon incorporation proc ess is influenced by the reacting arsenic species from thermally crack ed TBAs.