The laser ablation method is useful for the preparation of thin films
of compound semiconductors. In this study, the YAG laser ablation meth
od was used for the preparation of thin film CdS/CdTe solar cells. The
obtained characteristics were: V-OC = 0.6 V, I-SC = 13 mA/cm(2), FF =
0.4, and efficiency = 3%. Further improvements, especially in V-OC an
d FF, are expected by adjusting the appropriate composition of the CdT
e film. The method of mass production system of thin film solar cells
is proposed by adopting a multi-target system.