Porous silicon was prepared by anodization of a p/p(+) epitaxial c-Si
wafer. Its structure was examined by electron microscopy, Raman spectr
oscopy, and infrared spectroscopy. The results of the examination show
that the porous Si consists of many nano-scale pores and crystalline
slices, and that there is a thin molecular film containing Si-H, Si-O
and SI-H-2 bonds at the surface of the slices. Some solar cells were f
abricated from the porous Si wafers, and about 7% efficiency was obtai
ned.